Band Engineering of SnSe 2 via Ag‐Doping Enables Rapid NO 2 Sensors at Room Temperature
Year: 2025
Type: article
Source: Advanced Materials Technologies
Institution: Qingdao University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Awards: G7173595810, G8962022270
OpenAlex ID: W4416793552
