Effect of Pt Seed-Layer Thickness and Annealing on the Interfacial Reaction and Contact Resistivity of p⁺-In0.53Ga0.47As
Year: 2025
Type: article
Source: Electronic Materials Letters
Institution: Seoul National University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
Funder: Agency for Defense Development
Award: G2377321524
OpenAlex ID: W4416800820