Unraveling Band‐Tail Effects on Temperature‐Dependent Emission in GaAsBi via Photoluminescence
Year: 2025
Type: article
Abstract: The effect of Bi on the emission temperature sensitivity of GaAsBi remains a topic of debate, which hinders the design of optoelectronic devices. Band‐tail states, which are critical for GaAsBi performance, are suspected to drive the discrepancy, but their effect remains unclear. This work resolves the key debate using an innovative dual‐spectroscopy approach that combines temperature‐dependent photoluminescence (PL) and transmission spectroscopy to decouple the contributions of band‐tail states from intrinsic band‐edge behavior. For GaAs 1‐ x Bi x ( x = 0.033, 0.048), the energy‐temperature coefficients derived from transmission are composition‐independent, while those derived from PL decrease by ≈40% with higher Bi content. This apparent contradiction originates from the thermalized carrier redistribution between the valence band and band‐tail states at elevated temperatures and the intrinsic band‐edge thermal sensitivity in the transmission spectra. The dual‐spectroscopy approach is proven to be an effective method for clarifying the effects of band‐tail states on the thermal sensitivity, and provides valuable guidance for the design of stable GaAsBi optoelectronic devices.
Source: Advanced Science
Authors: Bing Yan, Xiren Chen, Liangqing Zhu, Lijuan Wang, Man Wang, Shumin Wang, Jun Shao
Institutions: Henan University of Science and Technology, Chinese Academy of Sciences, Shanghai Institute of Technical Physics, East China Normal University, Shanghai Institute of Microsystem and Information Technology, State Key Laboratory of Functional Materials for Informatics, State Key Laboratory of Infrared Physics, Chalmers University of Technology, University of Chinese Academy of Sciences
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,730
OpenAlex ID: W4416829057