A Pathway to High-Quality Heteroepitaxial Ga2O3 Films via Metalorganic Chemical Vapor Deposition
Year: 2025
Type: article
Abstract: This work systematically investigates the heteroepitaxial growth of β-Ga2O3 thin films under varied substrate and temperature conditions via metalorganic chemical vapor deposition (MOCVD). Comprehensive characterization reveals that both the substrate type and growth temperature significantly influence the crystalline quality, surface morphology, chemical composition, and defect structure. Films grown at higher temperatures generally exhibit superior crystallinity and closer-to-stoichiometry composition, and thus suggest a reduction in oxygen deficiency. Certain substrates are shown to facilitate high-quality epitaxial growth with smooth surfaces and excellent crystallographic alignment. These findings offer key insights into optimizing growth parameters for high-performance β-Ga2O3-based devices.
Source: Micromachines
DOI: 10.3390/mi16121363
Authors: Yifan Li, Yachao Zhang, Kelin Wang, Guoliang Peng, Shengrui Xu, Qian Feng, Jinbang Ma, Yixin Yao, Yue Hao, Jincheng Zhang
Institution: Xidian University
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
OpenAlex ID: W4416850160