Work

Contrasting properties of free carriers in n - and p -type Sb2Se3

Year: 2025

Type: article

Abstract: We report persistent photoconductivity in p-type Sb2Se3 single crystals doped with Cd or Zn, where enhanced conductivity remains for hours after illumination ceases at temperatures below ∼25 K. Comparative transport and infrared absorption measurements, including on n-type Cl-doped counterparts, reveal strong indications that hole transport in Sb2Se3 is more strongly affected by intrinsic carrier scattering than electron transport. These results point to a fundamental asymmetry in charge carrier dynamics and highlight the potential role of polaronic effects in limiting hole mobility in this quasi-one-dimensional semiconductor.

Source: Applied Physics Letters

DOI: 10.1063/5.0298931

Authors: F. Herklotz, E. V. Lavrov, T. D. C. Hobson, T. P. Shalvey, J. D. Major, K. Durose

Institutions: Technische Universität Dresden, University of Liverpool

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: Deutsche Forschungsgemeinschaft, Engineering and Physical Sciences Research Council

Awards: G2684921182, G5259143210, Overcoming the grain size limit to Voc in sustainable photovoltaics