Work

Robust multilevel storage characteristics of Al 2 O 3 /HfO 2 /Al 2 O 3 trilayer-structured memristor fabricated by atomic layer deposition for neuromorphic computing

Year: 2025

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae2626

Authors: Jian Liu, Xiaolong Zhou, Junjun Ouyang, Kunji Chen, Ke Wang

Institutions: East China University of Technology, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Natural Science Foundation of Jiangxi Province

Award: G5707839955

OpenAlex ID: W4416888624

FWCI: 0.459

Cites: 43

Cited by: 2

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