Work

First-Principles Study of Biaxial Strain Effects on Schottky Barrier Modulation in Graphene/ZnSe Heterostructures

Year: 2025

Type: article

Abstract: Reducing the Schottky barrier at the metal-semiconductor interface and achieving Ohmic contact is crucial for the development of high-performance Schottky field-effect transistors. This paper investigates the stability, interface interactions, interlayer charge transfer, and types of Schottky contacts in the graphene/ZnSe heterostructure structure using first-principles methods. It employs biaxial strain as a control mechanism. The results indicate that applying compressive strain increases the barrier and band gap while maintaining n-type contact; whereas tensile strain reduces the n-type barrier to negative values, inducing Ohmic contact and decreasing the band gap. The findings of this study will provide theoretical references for the design and fabrication of field-effect transistors, photodetectors, and other optoelectronic devices.

Source: Nanomaterials

DOI: 10.3390/nano15231816

Authors: Guowang Pang, Xue Wen, Lili Zhang, Yineng Huang

Institutions: Xinjiang Institute of Technology, Yili Normal University, National Laboratory of Solid State Microstructures, Nanjing University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

OpenAlex ID: W4416903499

FWCI: 0.848

Cites: 32

Cited by: 4

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