Work

Effects of Termination Process on the Structural and Optical Properties InAs Quantum Dots on GaAs

Year: 2025

Type: article

Abstract: The structural and optical properties of 3 monolayer (ML) thick InAs quantum dots (QDs) grown by migration-enhanced epitaxy (MEE), conventional molecular beam epitaxy (CON), and hybrid methods combining the two were investigated. The hybrid approaches included QD growth initiated with MEE and terminated with CON (MEE-CON) and the reverse sequence (CON-MEE). The results indicate that the deposition method used for the final 1 ML of InAs critically influences the structural and optical properties of the QDs. QDs with MEE termination on CON-initiated layers exhibited structural and optical features comparable to those grown entirely by MEE, and similar for the reverse case. These findings demonstrate that the final growth stage plays a decisive role in defining QD properties, regardless of the initial growth method.

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c00480

Authors: Sung-Yul L. Park, Illia Tikhonov, Suk In Park, Donghee Park, Jin-Dong Song

Institutions: Korean Association Of Science and Technology Studies, Korea Institute of Science and Technology

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: Korea Institute of Science and Technology, National Research Foundation of Korea

Awards: G3382451064, G3810903941