Work

Enhanced Efficiency and Reliability of AlGaN UVC-LED with Tapered Hole Injection Layer

Year: 2025

Type: article

Abstract: In this work, the electrical and optical performance of AlGaN-based ultraviolet-C light-emitting diodes (UVC-LEDs) with a tapered Al-content hole injection layer was investigated both theoretically and experimentally. A total of 1000 h of real-time electrical stress was conducted to study the degradation process of such devices. UVC-LED incorporating a hole injection layer with a larger gradient was found to significantly suppress the degradation process compared to a sample with a smaller tapering gradient. Marginal efficiency droop of only 4.55% as well as 66% improved light output power, were identified for the proposed design under a current density of approximately 100 A/cm2. It was unambiguously demonstrated that UVC-LED with a greatly tapered hole injection layer facilitates both electron blocking and hole injection, providing a promising pathway towards the development of high-efficiency UV emitters.

Source: Micromachines

DOI: 10.3390/mi16121376

Authors: Linlin Xu, Yang Peng, Feng Wu, Wei Guo, Jiangnan Dai, Changqing Chen

Institutions: Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Chinese Academy of Sciences, Ningbo Institute of Industrial Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,534

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hubei Province, National Key Research and Development Program of China