Work

Time Resolved Emission Spectroscopy of Si-doped MBE grown GaAsPBi

Year: 2025

Type: conference-paper

Source: HAL (Le Centre pour la Communication Scientifique Directe)

Authors: Jaffré, Alexandre, Alamarguy, David, Fukumoto, Keiki, Ouaras, Karim, Connolly, James P., Renard, Charles, Mencaraglia, Denis, Alvarez, J, Kanjanachuchai, Songphol, Himwas, Chalermchai, Boutchich, Mohamed

Institutions: Université Paris-Saclay, Laboratoire de Génie Électrique et Électronique de Paris, High Energy Accelerator Research Organization, Laboratoire de Physique des Interfaces et des Couches Minces, CentraleSupélec, Imperial College London, Centre de Nanosciences et de Nanotechnologies, Institut Photovoltaïque d’Île-de-France

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4416912966

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