Work

Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers

Year: 2025

Type: article

Abstract: AlGaN/GaN heterostructure high electron mobility transistors (HEMTs) have exceptional characteristics, but the structure-function relationship remains to be experimentally fully studied. This study presents a systematic experimental investigation of the synergistic effects of AlGaN barrier thickness and channel length on device performance, a critical gap in the literature, which is often dominated by simulation studies. We experimentally investigated how barrier thickness and channel length influence AlGaN/GaN FET performance. We observed that the transconductance increases with decreasing AlGaN barrier thickness for shorter channel lengths (15 and 50 µm) but showed the opposite trend for the longest channel length (100 µm). Meanwhile, the subthreshold swing was predominantly influenced by the barrier thickness, with thinner barriers generally yielding lower values. These results highlight the intricate interplay between barrier thickness and channel length, providing foundational insights into the design–performance relationship of AlGaN/GaN HEMTs and guiding the development of optimized sensors for different applications.

Source: Applied Sciences

DOI: 10.3390/app152312751

Authors: Mohamed Taha Amen, Duy Phu Tran, Asad Feroze, Edward Cheah, Benjamin Thierry

Institution: University of South Australia

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,896

Funders: Australian National Fabrication Facility, Hospital Research Foundation, National Health and Medical Research Council