Work

Vanadium‐Assisted Epitaxy Growth of Wafer‐Scale Bilayer Tungsten Disulfide Ferroelectric Semiconductor Single Crystals with High‐Endurance Memory

Year: 2025

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202509638

Authors: Yanan Peng, Hang Sun, Xiaohui Li, Bingqian Xu, Hui Li, Ruofan Du, Junbo Yang, Ling Huang, Wang Feng, Luying Song, Yuzhu Wang, Xia Wen, Yulin Jiang, Yao Cai, Zhenxing Wang, Jun He, Jianping Shi

Institutions: Wuhan University, Chinese Academy of Sciences, National Center for Nanoscience and Technology, University of Chinese Academy of Sciences

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Hubei Province, National Key Research and Development Program of China

Awards: G191931670, G2736104568, G3172651010, G4112225855, G53151737

OpenAlex ID: W4416913679

FWCI: 1.06

Cites: 61

Cited by: 5

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