Work

Improved electrical performance of LiNbO3 domain wall memories after thinning of interfacial layers at low temperatures

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0290798

Authors: Wen Di Zhang, Xing Long Wang, Bo Yang Zhang, Di Hu, An Quan Jiang

Institution: Fudan University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G7814998437

OpenAlex ID: W4416915039

FWCI: 0.231

Cites: 31

Cited by: 1

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