Temperature dependence of charge transport in single-layer graphene on surface-terminated diamond
Year: 2025
Type: article
Abstract: The integration of single-layer graphene with diamond substrate offers a promising platform for high-performance electronic devices by utilizing the exceptional properties of both materials. This study describes a fabrication process and transport measurements of single-layer graphene devices on diamond substrates featuring two surface terminations: hydrogen (H-terminated, thermal process) and oxygen (O-terminated, plasma treatment). The carrier transport properties were investigated using Hall effect measurements over a broad temperature range (80–400 K) under high-vacuum conditions (1 × 10-4 mbar). Our findings reveal that thermal annealing significantly improves the graphene-diamond interface quality, causing a notable increase in carrier mobility for devices on both H- and O-terminated from 1439 to 1644 cm2/Vs and from 1238 to 1340 cm2/Vs, respectively. We also found that the effect of remote interfacial phonon scattering on high-temperature mobility is affected by the termination type. These findings highlight the importance of substrate surface engineering and offer a pathway for optimizing graphene-diamond heterostructures for advanced electronic applications.
Source: Carbon Trends
Institution: Uppsala University
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,000
OpenAlex ID: W4416920882
