Impact of Size Scaling in Cryogenic InGaAs/InP HEMTs for Low-Noise and High-Frequency Performance
Year: 2025
Type: article
Abstract: This work investigates the impact of size scaling on the performance of cryogenic InxGa${}_{{1} -{x}}$As/InP high electron mobility transistors (HEMTs) for low-noise and high-frequency applications. Two quantum-well heterostructures, with 75% and 80% indium content, are examined from 300 to 4 K, including devices with gate lengths down to 40 nm and gate widths down to 380nm. At cryogenic temperatures, the 80% indium channel achieves a record combination of high-frequency metrics${f}_{T} =622$GHz,${f}_{\text {MAX}} =733$GHz, and low-noise indication factor$({I}_{D})^{1/2} / {g}_{m} = 0.17~({V}\cdot \text {mm}/\text {S})^{1/2}$on the same device. This performance is enabled by heterostructure engineering, resulting in ultralow${R}_{\text {ON}} = 250~\Omega \cdot $$\mu $m. The 75% indium heterostructure instead demonstrates superior low-noise operation, with a minimum subthreshold swing SS = 8.5 mV/decade and a noise indication factor as low as$({I}_{D})^{1/2} / {g}_{m} = 0.15~({{V}\cdot \text {mm}/\text {S}})^{1/2}$at optimal device dimensions. These results highlight the potential of InGaAs/InP HEMTs in cryogenic low-noise amplifiers (LNAs), for qubit readout in future high-density quantum computing architectures.
Authors: Alberto Ferraris, Eunjung Cha, Antonis Olziersky, Marilyne Sousa, Hung-Chi Han, Edoardo Charbon, Kirsten Moselund, Cezar Zota
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4416922675
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