Time‐Domain Content‐Addressable Memory Based on Single Ambipolar Ferroelectric Memcapacitor for High‐Density and Highly‐Precise Distance Function Computation (Adv. Electron. Mater. 20/2025)
Year: 2025
Type: article
Abstract: Ferroelectric Memcapacitors In their Research Article (10.1002/aelm.202500421), Woo Young Choi and co-workers propose and demonstrate a novel capacitive time-domain (TD) content-addressable memory (CAM) based on a single ambipolar ferroelectric memcapacitor (1C) exhibiting band-reject-filter-shaped capacitance-voltage characteristics. The proposed 1C TD CAM performs linear Hamming distance computation through propagation delay modulation, enabling high-density associative memory and highly reliable in-memory nearest-neighbor search for one-shot learning.
Source: Advanced Electronic Materials
DOI: 10.1002/aelm.70200
Institutions: Seoul National University, Sogang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
OpenAlex ID: W4416933832
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