Work

Hybrid superconducting-ferroelectric quantum memristor

Year: 2025

Type: article

Abstract: The nontrivial integration of qubits with classical computing systems and the lack of quantum-memory devices remain a key obstacle in the development of quantum technologies. Here, we present a theoretical platform for hybrid quantum devices with memory characteristics. In these current-driven hybrid memristors, a ferroelectric layer serves as the tunneling barrier in a superconducting Josephson junction; thus, the potential barrier is history-dependent. A memory-integrated phase qubit and a Lagrangian description of the superconducting circuit are also presented, paving the way to highly functional, self-modulated Josephson-junction technologies.

Source: Physical Review Research

DOI: 10.1103/4746-w9cm

Authors: Maria A. Badarne, Emanuele G. Dalla Torre, Yachin Ivry

Institutions: Technion – Israel Institute of Technology, Bar-Ilan University, University of California, Berkeley

Language: English

Topic: Quantum Information and Cryptography

Subfield: Artificial Intelligence

Field: Computer Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,625

Funders: Nancy and Stephen Grand Technion Energy Program, Neubauer Family Foundation, American Technion Society