Work

Backside Etching Thickness Dependence and Reconfigurable Logic Gate Implementation in AlGaN/GaN HEMTs

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c02196

Authors: Zheng Shi, Sirui Wu, Zheheng Liu, Tianlong Xie, Hao Huang, Mingyuan Xie, Yongjin Wang, Hongbo Zhu, Xumin Gao

Institution: Nanjing University of Posts and Telecommunications

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Research of Jiangsu Higher Education Institutions of China, Graduate Research and Innovation Projects of Jiangsu Province

Awards: G2028211553, G4505709824, G4862945771, G6587366229, G7290676604, G8888446435

OpenAlex ID: W4416938179

FWCI:

Cites: 34

Cited by:

Related to: