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Growth and analysis of low-resistivity polycrystalline SiC using the PVT method

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Year: 2025
Type: article
Source: CrystEngComm
DOI: 10.1039/d5ce00878f
Authors: Anqi Wang, Fan Wang, Binjie Xu, Lingling Xuan, Shengou Lu, Xuefeng Han, Deren Yang, Xiaodong Pi
Institution: Zhejiang University
Language: English

Topic: Silicon Carbide Semiconductor Technologies
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China, Natural Science Foundation of Zhejiang Province, Key Research and Development Program of Zhejiang Province
Awards: G1667684680, G1989139330, 大尺寸高质量碳化硅单晶中位错演变和调控, G7005894188
OpenAlex ID: W4416948358
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Cites: 19
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