Work

Impact of graded doping transition layer on structural properties of Zr-doped AlN epilayers

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0305250

Authors: H. Alwan, D. Shima, G. Balakrishnan, J. Li, J. Y. Lin, H. X. Jiang

Institutions: Texas Tech University, University of New Mexico

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, National Aeronautics and Space Administration, Advanced Research Projects Agency - Energy

Awards: G19940866, G2733459855, MRI: Acquisition of a High-Resolution Analytical Scanning Transmission Electron Microscope for Materials and Engineering Research

OpenAlex ID: W4416951229

FWCI: 0.323

Cites: 40

Cited by: 1

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