Work

Effect of Indium Doping on the Reliability Characteristics of Chalcogenide GeSbSeTe Thin-Film-Based Selector-Only Memory Devices

Year: 2025
Type: article
Institution: Yonsei University
Language: English
Open Access status: closed
Award: G162526083
OpenAlex ID: W4416952008
FWCI: 0.636
Cites: 53
Cited by: 3
Related to: