Work

Analysis of the Desaturation Circuit Behaviour Under Paralleled GaN Devices Including the Effects of Parasitic Parameters

Year: 2025

Type: conference-paper

DOI: 10.1109/ecce58356.2025.11259650

Authors: Guido Rubino, Rahul Kumar, Fabio Giulii Capponi, Giulio De Donato

Institution: Sapienza University of Rome

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4416961136

FWCI:

Cites: 10

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