Work

Enhanced Stability Analysis of Parallel Connected GaN-Transistors in Half-Bridge Circuits

Year: 2025

Type: conference-paper

DOI: 10.1109/ecce58356.2025.11259647

Authors: Julien V. Hönschel, Jordan Sorge, Martin März

Institution: Fraunhofer Institute for Integrated Systems and Device Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4416963128

FWCI: 4.717

Cites: 12

Cited by: 2

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