Year: 2025
Type: article
Abstract: The growth of two-dimensional epitaxial materials on industrially relevant substrates is critical for enabling their scalable synthesis and integration into next-generation technologies. Here we present a comprehensive study of the molecular beam epitaxial growth of gallium selenide on 2-inch c-plane sapphire substrates. Using in situ reflection high-energy electron diffraction (RHEED), in situ Raman spectroscopy, optical and scanning electron microscopies, we construct a diagram of the gallium selenide growth modes as a function of substrate temperature (530–650 °C) and Se/Ga flux ratio (5–110). The growth mode diagram reveals distinct regimes, including the growth of layered post-transition metal monochalcogenide GaSe with an unstrained in-plane lattice constant of 3.71 ± 0.01 $$\dot{{{{\rm{A}}}}}$$ A ° and a partial epitaxial alignment on sapphire. This work demonstrates a RHEED-based pathway for synthesizing gallium selenide of specific phase and morphology, and the construction of a phase diagram for high vapor pressure III-VI compounds that can be applied to a wide range of other metal chalcogenide materials.
Source: Communications Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,690
Awards: EXC 2089: econversion, G1489577826, G1544390775, G1618389525, G1768993395, G258225891, G2960115771, G3764765484, G4425028501, G4710139657, G5768859344, G631972144, G866891011, SFB 1083: Struktur und Dynamik innerer Grenzflächen, EXC 2111: Munich Center for Quantum Science and Technology (MCQST)
OpenAlex ID: W4416976572