Work

Thermoelectric and electronic transport properties of thermal and plasma-enhanced ALD grown titanium nitride thin films

Year: 2025

Type: article

Abstract: ) at room temperature was calculated to be 0.0056 for PEALD TiN films which is significantly higher than the value of 0.0002 obtained for thermal ALD TiN films. Our findings provide critical insights into transport properties of TiN, offering guidance for the development of conductive nanolayers in thermoelectric, nanoelectronic, and on-chip cooling applications, where precise control over thermal and electronic behavior is vital, thereby expanding the relevance of ALD TiN in high-performance applications.

Source: Nanoscale Advances

DOI: 10.1039/d5na00914f

Authors: Priyanka Goel, Christoffer Kauppinen, Ramesh Raju, Ilkka Tittonen

Institutions: Aalto University, VTT Technical Research Centre of Finland

Language: English

Topic: Thermal properties of materials

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,962

Funders: Academy of Finland, Aalto-Yliopisto