Year: 2025
Type: article
Abstract: This Letter presents a novel on-chip afterpulsing characterization method demonstrated using gated-mode short-wave infrared single photon avalanche diode arrays, effectively overcoming the measurement limitations of conventional methods. Through this approach, we first achieve a comprehensive evaluation of the full-chip afterpulsing effect by adjusting the ratio between gated-on time and gated-off time and employing a sampling window technique. Experimentally validated using a room-temperature-operated 160 × 116 Ge-on-Si single photon avalanche diode array, the approach clearly reveals the potential pixel-to-pixel variations in afterpulsing behavior across SWIR single-photon avalanche diode arrays, highlighting the critical importance of full-chip evaluation for designing and optimizing gating period.
Source: APL Photonics
DOI: 10.1063/5.0291080
Authors: Chi-En Chen, Hon-Yih Tu, Shih-Min Huang, Pi-Ju Cheng, Ming-Chieh Hsu, Tzu-Jui Wang, Shang-Fu Yeh, Calvin Yi-Ping Chao, Jau-Yang Wu, Chao-Hsin Wu
Language: English
Subfield: Instrumentation
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,750
Funders: National Science and Technology Council, Lam Research, Ministry of Education, Taiwan Semiconductor Manufacturing Company, Ministry of Science and Technology, Taiwan, Chung-Shan Institute of Science and Technology, National Taiwan University, National Science and Technology Council, National Chung-Shan Institute of Science and Technology
Awards: G1474568, G3827711708, G4361071706, G4943233016, G6173157864, G6419545154, Dc/Rf Spice Modeling of Cryo-Cmos Devices( III ), G6740122877, G7117555794, G7715124962, G840849588, Investigation of Key Components, Qkd Protocol, and System Integration toward Fiber-Based Wdm Optical Quantum Communication—From Engineering Vi Ewpoint( III ), G962880067
OpenAlex ID: W4417000259