Work

Heterojunction Wide-Bandgap Amorphous Metal Oxide High-Voltage Thin-Film Transistors with High Driving Current and Low Process Temperature

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c02331

Authors: Jungha Lee, Junhee Lee, Duhee Kim, Hyuk-Jun Kwon, Jae Eun Jang, Hongki Kang

Institutions: Daegu Gyeongbuk Institute of Science and Technology, Seoul National University

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Research Foundation of Korea

Awards: G600435245, G958129113

OpenAlex ID: W4417023560

FWCI:

Cites: 30

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