Non-radiative energy transfer between boron vacancies in hexagonal boron nitride and other 2D materials
Year: 2025
Type: preprint
Abstract: Boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) have emerged as a promising platform for two-dimensional quantum sensors capable of operating at atomic-scale proximity. However, the mechanisms responsible for photoluminescence quenching in thin hBN sensing layers when placed in contact with absorptive materials remain largely unexplored. In this Letter, we investigate non-radiative Förster resonance energy transfer (FRET) between $V_B^-$ centers and either monolayer graphene or 2D semiconductors. Strikingly, we find that the FRET rate is negligible for hBN sensing layers thicker than 3 nm, highlighting the potential of $V_B^-$ centers for integration into ultra-thin quantum sensors within van der Waals heterostructures. Furthermore, we experimentally extract the intrinsic radiative decay rate of $V_B^-$ defects.
Source: arXiv (Cornell University)
Authors: Fraunié, Jules, Glazov, Mikhail M., Roux, Sébastien, Torres-Dias, Abraao Cefas, Crunteanu-Stanescu, Cora, Fournier, Tom, Dehaghani, Maryam S., Clua-Provost, Tristan, Lagarde, Delphine, Lombez, Laurent, Marie, Xavier, Lassagne, Benjamin, Poirier, Thomas, Edgar, James H., Jacques, Vincent, Robert, Cedric
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4417034887