Year: 2025
Type: article
Abstract: Silicon detectors play a crucial role in high energy physics experiments. In future high energy physics experiments, silicon detectors will be exposed to extremely high fluence environment, which can significantly affect their performance. It is important to understand the electrical behavior of detectors after irradiation. In this study, an irradiation simulation framework is constructed in RAdiation SEmiconductoR (RASER) to simulate leakage current and charge collection effciency. The defect parameters are obtained from the Hamburg penta trap model (HPTM). Based on this work, we predict the silicon inner tracker which under a ten-year Circular Electron Positron Collider (CEPC) Higgs mode run can still maintain over 90% charge collection efficiency.
Source: Journal of Instrumentation
Authors: Xingchen Li, Chenxi Fu, Hui Li, Zhan Li, Lin Zhu, Congcong Wang, Xiyuan Zhang, Weimin Song, Hui Liang, Cong Liu, Hongbo Wang, Xin Shi, Suyu Xiao
Language: English
Subfield: Nuclear and High Energy Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4417047170