InP Temperature Sensor with Si-CMOS Interface for Photonic Integrated Circuits
Year: 2025
Type: conference-paper
Abstract: This paper describes a temperature sensor with digital output, built interfacing two InP diodes fabricated in a Photonic Integrated Circuit to a Si-CMOS chip. It achieves 22 mK resolution for 100 ms measurement time, and a maximum$1.13^{\circ} C$inaccuracy from 0 to$85^{\circ}C$.
Institution: Eindhoven University of Technology
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4417052443