Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes

Year: 2025

Type: article

Abstract: This work presents a monolithically integrated short-wavelength infrared (SWIR) image sensor based on indium arsenide (InAs) quantum dot photodiodes (QDPDs). The thin-film photodiode (TFPD) architecture enables direct integration on silicon readout integrated circuits (ROICs), eliminating wafer-to-wafer bonding and providing a scalable, RoHS-compliant alternative to lead-based colloidal quantum dot (CQD) devices. The proposed 3T pixel design incorporates dual conversion gain (DCG), enabling wide dynamic range imaging. The fabricated prototype achieves external quantum efficiencies of 28% at 1200 nm and 4.8% at 1400 nm, together with a dynamic range of 83.5 dB. A frame-based digital correlated double sampling (CDS) scheme stores the reset level in the digital domain and subtracts it after integration, thereby suppressing reset kTC noise and mitigating random telegraph signal (RTS) noise. Imaging demonstrations highlight SWIR-specific functionalities, including material discrimination, imaging through smoke, and transmission through silicon wafers. A performance comparison with previously reported SWIR pixels further confirms the competitiveness of the proposed InAs QDPD imager. These results establish InAs QDPDs as a promising platform for next-generation SWIR imaging, combining high sensitivity, extended spectral coverage, and scalable integration.

Source: Sensors

DOI: 10.3390/s25237345

Institutions: IMEC, Pohang University of Science and Technology, Hanyang University, Seoul National University of Science and Technology

Language: English

Topic: CCD and CMOS Imaging Sensors

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $3,137

Funder: Vlaamse regering

OpenAlex ID: W4417055082