Work

Multimodal Resistive Switching Coexistence of Analog, Digital, and Complementary Resistive Switching Modes in SiN x /AlO x N y ‐Based Resistive Random Access Memory

Year: 2025

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500807

Authors: Rui Wang, Haixia Gao, Xuan Qiu, Yang Zhao, Deyang Zeng, Zhengyu Zhou, Xiaohua Ma

Institution: Xidian University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G3774827882, G687652395, G704711181

OpenAlex ID: W4417104682

FWCI:

Cites: 20

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