Synthesis of hybrid graphene/silicon thin film Schottky junctions for photodiode applications
Year: 2025
Type: article
Abstract: CVD-grown graphene was transferred to p-type silicon films using wet transfer technique to create Schottky junction-based photodiodes. Electrical transport and optoelectronic properties of the produced diode were explored to assess the performance of the device. Room-temperature current–voltage (IV) curves of the structure showed a typical rectifying behavior. The barrier height obtained from capacitance–voltage measurements was quite consistent with that obtained from IV curves. The structure revealed enhanced responsivity of 1.25 A/W at wavelength of 850 nm. A reversible light-triggered switching response with an ON/OFF current ratio of 150 was achieved. A reversible switching feature was observed in dynamic response measurements with response and recovery durations of 300 and 340 ms, respectively.
Source: Journal of Applied Physics
DOI: 10.1063/5.0294025
Authors: Mohamed Shaker Salem, Mohamed Alrefaey Hamouda, Mohamed Amin, Mahmoud Ashour Sliem, Soha Mohamed Abd El Wahab
Institutions: Cairo University, Taibah University
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
Funder: Alexander von Humboldt-Stiftung
OpenAlex ID: W4417118445