Negative bias temperature stress-induced threshold voltage instability and mobility degradation in SiC PMOS devices
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0296031
Authors: Zijian Hu, Hongyi Xu, Na Ren, Junze Li, Jiangbin Wan, Kuang Sheng
Institution: Zhejiang University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Award: G6373544498
OpenAlex ID: W4417119182