Work

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

Year: 2025

Type: article

Abstract: This study reports the thickness scaling of sputtered ferroelectric Zn0.61Mg0.39O (ZMO) thin films down to 43 nm. Encapsulated IrO2/ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm−2 and coercive fields that increased from 3.9 to 4.4 MV cm−1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

Source: Applied Physics Letters

DOI: 10.1063/5.0293746

Authors: Leonard Jacques, R. Jackson Spurling, Jon-Paul Maria, Susan Trolier-McKinstry

Institution: Pennsylvania State University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Funder: Office of Science

Award: CENTER FOR 3D FERROELECTRIC MICROELECTRONICS