Work

InAs/InAlGaAs Quantum Dot Lasers on InP and Si

Year: 2025

Type: article

Abstract: We report the development of InAs/InAlGaAs quantum-dot (QD) lasers grown on both InP and Si substrates. A modified indium flush technique was employed to control dot-height distribution and tailor the emission wavelength by using a strained partial capping layer. Using this approach, 7-stack InAs/InAlGaAs QD lasers on InP substrates exhibit a low threshold current density (Jth) of 63 A/cm2per QD layer and high-temperature operation up to 140°C. Furthermore, electrically pumped InAs/InAlGaAs QD lasers directly grown on Si are also demonstrated, with a lowJthof 1.35 kA/cm2and a maximum operating temperature of 100°C. This work highlights the effectiveness of the modified indium flush in achieving high-performance InAs/InAlGaAs QD lasers. These results represent a significant step forward in the development of high-performance C-/L-band QD lasers in the InAs/InAlGaAs/InP material system for Si photonics.

Source: IEEE Journal of Selected Topics in Quantum Electronics

DOI: 10.1109/jstqe.2025.3641548

Authors: Hui Jia, Jae-Seong Park, Jun Li, Kongming Liu, Jiajing Yuan, Calum Dear, Haotian Zeng, Yangqian Wang, Khalil El Hajraoui, Shangfeng Liu, Huiwen Deng, Mickael Martin, Yaonan Hou, Quentin M. Ramasse, Richard Beanland, Qiang Li, Thierry Baron, Mingchu Tang, Alwyn Seeds, Huiyun Liu

Institutions: University College London, Sci-Tech Daresbury, SuperSTEM, Cardiff University, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire des Technologies de la Microélectronique, Swansea University, University of Warwick

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, Engineering and Physical Sciences Research Council

Awards: Energy-Loss Spectroscopy in a Scanning Electron Microscope, Future Compound Semiconductor Manufacturing Hub, EPSRC Compound Semiconductor Manufacturing Hub for a Sustainable Future, A National Research Facility for Epitaxy, G434337789, SuperSTEM: National Research Facility for Advanced Electron Microscopy, QUantum Dot On Silicon systems for communications, information processing and sensing (QUDOS), EPSRC Centre for Doctoral Training in Compound Semiconductor Manufacturing, C-band quantum-dot lasers on monolithically grown Si platform, G6216615454, C-band quantum-dot lasers on monolithically grown Si platform

OpenAlex ID: W4417131775

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