Work

Low-Temperature Growth of High-Quality SiC Single Crystals via TSSG from Si–Nd–C Melt: Multiphysics Simulation and Experimental Validation

Year: 2025

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01072

Authors: Guangxin Zhang, Hao Yang, Tai Li, Mengmeng Yuan, Kai Liu, Xiuhua Chen, Guoqiang Lv, Wenhui Ma

Institutions: Kunming University of Science and Technology, Yunnan University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G8984822915

OpenAlex ID: W4417135028

FWCI: 0.227

Cites: 32

Cited by: 1

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