Work

DFT coupled with NEGF study of N-type MOSFET based on 2D Bi 2 C 3 semiconductor

Year: 2025

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae2922

Authors: Yongjun Huang, Jialin Yang, Weicong Sun, Hengze Qu, Chuyao Chen, Huipu Wang, Jia Dong, Xiaoqin Shi, Shengli Zhang

Institutions: Nanjing University of Science and Technology, Ministry of Industry and Information Technology

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G1246188717

OpenAlex ID: W4417136754

FWCI: 0.208

Cites: 57

Cited by: 1

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