Work

High-performance β -Ga2O3 vertical diodes integrating metal-interlayer-semiconductor architecture and mesa termination

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0293221

Authors: Hongqing Yue, Hong Zhou, Jianghan Zhao, Sami Alghamdi, Sultan Alghamdi, Yue Hao, Jincheng Zhang

Institutions: Xidian University, Guangzhou Institute of Technology, King Abdulaziz University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G3297765819, G5821942213, G7578523845

OpenAlex ID: W4417164089

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Cites: 51

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