Year: 2025
Type: article
Abstract: To design effective circuits that modulate the optical output of LEDs in communication systems, it is essential to accurately model their electrical response, particularly to small modulation signals. The dynamic resistance of an LED is known to depend on the DC bias and can be obtained from the Shockley diode equation. However, the modeling of its dynamic capacitance has been much less explored. This paper proposes a novel approach to modeling the dynamic capacitance of an LED under forward bias. By combining the Shockley equation with the ABC electron–hole recombination rates in a novel way, we derive an analytical expression. We verify the accuracy of our model using experimental data in the 1–100 MHz range, which corresponds to the modulation bandwidth defined in the ITU G.vlc standard for LiFi.
Source: APL Electronic Devices
DOI: 10.1063/5.0284086
Institution: Eindhoven University of Technology
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
Award: G3156823545
OpenAlex ID: W4417199552