Work

Electronic density of states modulated sliding ferroelectric tunneling junctions

Year: 2025

Type: article

Source: Physical review. B./Physical review. B

DOI: 10.1103/bqcm-j3sh

Authors: Xinyu Lv, Takashi Taniguchi, Kenji Watanabe, Ming Lv, Jiamin Xue

Institutions: ShanghaiTech University, National Institute for Materials Science

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, National Natural Science Foundation of China, Japan Society for the Promotion of Science

Awards: G158285548, G4806815962, G898758523

OpenAlex ID: W4417212748

FWCI:

Cites: 28

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