Year: 2025
Type: article
Abstract: Hole spin qubits in Ge/GeSi heterostructures benefit from the clean environment of epitaxial interfaces and from the intrinsic spin-orbit coupling that enables efficient electrical control, which makes them promising candidates for quantum computation. However, spin-orbit coupling also enhances the sensitivity to electrical disorder, potentially increasing variability. In this work, we perform numerical simulations in a realistic device geometry to quantify the variability of the charge and spin properties of Ge qubits induced by charge traps at the SiGe/oxide interfaces. We show that while the variability of charge properties remains moderate, spin properties (g-factors and Rabi frequencies) show significant dispersion. We explore the implications of this variability for large-scale architectures, and provide guidelines to minimize variability both in terms of interface quality requirements and optimal operation strategies.
Source: Physical Review Applied
DOI: 10.1103/mtky-93p1
Authors: Biel Martinez, Yann-Michel Niquet
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4417215397