Quantum dots on GaAs substrates as integration-ready high-performance single-photon sources at telecommunication wavelengths
Year: 2025
Type: article
Abstract: The development of deterministic single-photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy (MBE) grown semiconductor quantum dots (QDs) emitting in the telecom O- and C-bands. The QDs are embedded in an In Ga As matrix with fixed indium content grown on top of a compositionally graded In Ga As buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as 50 μ eV , close to the spectrometer resolution limit, low fine structure splittings close to 10 μ eV , and g ( 2 ) ( 0 ) values as low as 0.08 . These results advance the current performance metrics for MBE-grown QDs on Ga As substrates emitting in the telecom bands and showcase the potential of the heterostructures presented for further integration into photonic devices.
Source: Physical Review Applied
DOI: 10.1103/4fzb-595x
Authors: Beatrice Costa, Bianca Scaparra, Xiao Wei, Hubert Riedl, Gregor Koblmüller, Eugenio Zallo, Jonathan J. Finley, Lukas Hanschke, Kai Müller
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4417268433