Work

Vertically Aligned TiS 2 Adhesion Layers via Plasma-Induced Metal Sulfidation and Two-Terminal Device Application

Year: 2025

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.5c16448

Authors: Hyelim Shin, Jae Woo Kim, Sujeong Han, Chanho Park, Hyunwoo Shim, Chaeyeon Jung, Ki Kang Kim, Taesung Kim

Institutions: Sungkyunkwan University, Samsung (South Korea), Hubei University of Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, Ministry of Science, ICT and Future Planning, Korea Institute for Advancement of Technology, Korea Institute of Machinery and Materials, National Research Foundation of Korea

Awards: G3794046718, G4568974298, G4979119625, G5184275419, G6577800258, G7149275897, G7746907417

OpenAlex ID: W4417275261

FWCI: 0.374

Cites: 24

Cited by: 1

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