Work

Ambipolar to anti-ambipolar light-induced transition in WSe 2 -based FETs

Year: 2025

Type: article

Abstract: under red laser illumination. The light-induced transition from ambipolar to anti-ambipolar behaviour is qualitatively described through energy band diagrams, with the photocurrent peak corresponding to the n-p transition point observed in the dark.

Source: Materials Horizons

DOI: 10.1039/d5mh01871d

Authors: Kimberly Intonti, Adolfo Mazzotti, Aniello Pelella, Filippo Giubileo, Nadia Martucciello, Stephen O’Sullivan, Vilas Patil, Paul K. Hurley, Lida Ansari, Farzan Gity, Antonio Di Bartolomeo

Institutions: University of Salerno, University College Cork, Tyndall National Institute

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Funders: Science Foundation Ireland, Università degli Studi di Salerno, Advanced Materials and Bioengineering Research, HORIZON EUROPE Marie Sklodowska-Curie Actions

Awards: Gated Twisted 2D Superconductor Devices for Quantum Technologies (G-TScon2D), G2844556099, G5098725405, G645112151, AMBER_Phase 2

OpenAlex ID: W4417280260

FWCI: 1.243

Cites: 45

Cited by: 6

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