Year: 2025
Type: article
Abstract: ABSTRACT This study examines the effects of 5 MeV proton irradiation, applied at fluences of 1 × 10 11 , 1 × 10 12 , 1 × 10 13 , and 1 × 10 14 cm −2 , on 20 nm thick SnO 2‐x thin films and field‐effect transistors (FETs) with Sn‐doped In 2 O 3 (ITO) electrodes. In the SnO 2‐x films, both carrier concentration and mobility increased steadily with rising fluences. The irradiated ITO layers displayed higher carrier concentrations but reduced mobilities compared with their pristine counterparts. Higher conductivity of the constituent films resulted in a negative shift in threshold voltage (V th ) and an enhanced drain current (I DS ) in the SnO 2‐x FETs. The greater the fluence, the more pronounced these changes became. Regardless of the fluence, the on/off ratios of the FETs remained stable at ∼10 6 , indicating minimal structural damage. Moreover, the irradiation‐induced changes are not temporary. When the irradiated devices are stored in air for a month or annealed at 200 °C in air for 2 h, both I DS and V th became more stabilized. Collectively, these results demonstrate that SnO 2‐x FETs offer radiation tolerance and electrical stability, making them strong candidates for radiation‐hardened electronics in space environments.
Source: Advanced Electronic Materials
Authors: Huiseung Kim, Jeongtae Kim, Suhyeon Park, Dawon Lee, Jiseop Byeon, Jeongin Seo, Dong‐Seok Kim, Roy Byung Kyu Chung
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
Awards: G4881578523, G5059619820
OpenAlex ID: W4417290211