Year: 2025
Type: conference-paper
Abstract: This study explores the use of X-ray fault injection localization techniques to evaluate the security of integrated circuits, particularly Flash memory in microcontrollers. Utilising a tungsten shield with an injection aperture, the experiments demonstrated precise targeting of the fault injection. The method was applied to both powered and unpowered devices, successfully discharging floating gate transistors in Flash memory, resulting in localised faults. The findings emphasise the effectiveness of the shield in localization X-ray exposure and highlight the vulnerabilities of critical integrated circuits to such attacks. The results obtained demonstrate the feasibility of injecting single bit faults into the Flash memory with X-ray of both powered and unpowered chips. This research contributes to the advancement of our understanding of X-ray fault injection mechanisms and underscores the importance of implementing robust security measures to counteract the emergence of novel threats.
Institutions: Centre National de la Recherche Scientifique, Mines Saint-Étienne, Laboratoire Hubert Curien, Université Jean Monnet, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, Laboratoire d'Électronique des Technologies de l'Information, Institut polytechnique de Grenoble, Science et Ingénierie des Matériaux et Procédés, Université Grenoble Alpes, CEA Grenoble
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Agence Nationale de la Recherche
OpenAlex ID: W4417407403
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