Work

Rutile-Structured GeO 2 Thin Films Grown on Various Planes of α-Al 2 O 3 Substrates with Graded Ge x Sn 1– x O 2 Buffer Layers

Year: 2025

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c01935

Authors: Kazuki Shimazoe, Masashi Kato, Hiroyuki Nishinaka

Institutions: Nagoya Institute of Technology, Kyoto Institute of Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Japan Society for the Promotion of Science, Fusion Oriented REsearch for disruptive Science and Technology

Awards: G2339425401, G5894096198

OpenAlex ID: W4417416236

FWCI: 0.489

Cites: 23

Cited by: 3

Related to: