Work

Operation and Design of Dirac-Source FETs Using Ab Initio Transport Simulations: Subthreshold Swing and Drive Current

Year: 2025

Type: article

Abstract: This article investigates the operation and design of Dirac-source FETs (DSFETs), by using ab initio transport simulations based on the NEGF formalism, which seems appropriate given the novelty of the physics and of the device architecture introduced by DSFETs. In particular, we first discuss the limitations in terms of drive current of DSFETs based on a graphene-MoS2van der Waals heterojunction. Then, we propose a novel p-type DSFET based on hydrogenated graphene (HGr). Our simulation results suggest that the HGr-DSFET has a robust sub-60 mV/dec operation and anon-current between$2\times $and$4\times $larger than the graphene-MoS2DSFET counterpart. Our study investigates the influence on the device operation of several material and design parameters, using either ballistic simulations or simulations accounting for electron–phonon scattering.

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3627189

Authors: D. K. Nguyen, A. Pilotto, D. Lizzit, M. Pala, P. Dollfus, D. Esseni

Institutions: University of Udine, Centre de Nanosciences et de Nanotechnologies, Centre National de la Recherche Scientifique, Université Paris-Saclay

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funders: European Commission, HORIZON EUROPE Framework Programme

Awards: G6505471761, Dirac cold-source transistor technologies towards attojoule switching