Work

Development for high-aspect-ratio hole etching with hydrogen fluoride gas based cryogenic process

Year: 2025

Type: article

Source: Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

DOI: 10.1116/6.0005035

Authors: Ryutaro Suda, Masahiko Yokoi, Du Zhang, Yu-Hao Tsai, Maju Tomura, Yoshihide Kihara

Institution: Tokyo Electron (Japan)

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4417430817

FWCI: 1.155

Cites: 38

Cited by: 5

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